Gallium arsenide

Results: 418



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11Inside Front Cover: Defect Tolerance and Nanomechanics in Transistors that Use Semiconductor Nanomaterials and Ultrathin Dielectrics (Adv. Funct. Mater)

Inside Front Cover: Defect Tolerance and Nanomechanics in Transistors that Use Semiconductor Nanomaterials and Ultrathin Dielectrics (Adv. Funct. Mater)

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2008-09-08 15:02:12
12High-performance GaInAs / GaAs quantum-dot lasers based on a single active layer. F.Schäfer,a) J.P.Reithmaier, and A. Forchel Technische Physik, Universität Würzburg, Am Hubland, DWürzburg , Germany (Received

High-performance GaInAs / GaAs quantum-dot lasers based on a single active layer. F.Schäfer,a) J.P.Reithmaier, and A. Forchel Technische Physik, Universität Würzburg, Am Hubland, DWürzburg , Germany (Received

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Source URL: www.1974eiko.co.jp

Language: English - Date: 2009-05-08 06:40:02
13Printable, Flexible, and Stretchable Forms of Ultrananocrystalline Diamond with Applications in Thermal Management** COMMUNICATION

Printable, Flexible, and Stretchable Forms of Ultrananocrystalline Diamond with Applications in Thermal Management** COMMUNICATION

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2008-06-20 09:17:59
14CINT PublicationsY. Sun, S. F. Cheng, G. Chen, R. F. Hicks, J. G. Cederberg, and R. M. Biefeld, “The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001),” J. Appl. Ph

CINT PublicationsY. Sun, S. F. Cheng, G. Chen, R. F. Hicks, J. G. Cederberg, and R. M. Biefeld, “The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001),” J. Appl. Ph

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Source URL: cint.lanl.gov

Language: English - Date: 2016-04-11 18:06:17
15Flexible Vertical LEDs  Flexible Vertical Light Emitting Diodes Rak-Hwan Kim, Stanley Kim, Young Min Song, Hyejin Jeong, Tae-il Kim, Jongho Lee, Xuling Li, Kent D. Choquette, and John A. Rogers* Recently developed concep

Flexible Vertical LEDs Flexible Vertical Light Emitting Diodes Rak-Hwan Kim, Stanley Kim, Young Min Song, Hyejin Jeong, Tae-il Kim, Jongho Lee, Xuling Li, Kent D. Choquette, and John A. Rogers* Recently developed concep

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2012-11-19 12:59:11
16MITSUBISHI ELECTRIC RESEARCH LABORATORIES http://www.merl.com An MMI-Based 4-Beam Combiner with Spline-Curved Index Step Koike-Akino, T.; Kojima, K.; Wang, B.; Parsons, K.; Nishikawa, S.; Yagyu, E.

MITSUBISHI ELECTRIC RESEARCH LABORATORIES http://www.merl.com An MMI-Based 4-Beam Combiner with Spline-Curved Index Step Koike-Akino, T.; Kojima, K.; Wang, B.; Parsons, K.; Nishikawa, S.; Yagyu, E.

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Source URL: www.merl.com

Language: English - Date: 2015-09-11 09:58:32
17High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs / AlGaAs HEMT structures wer

High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs / AlGaAs HEMT structures wer

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Source URL: www.1974eiko.co.jp

Language: English - Date: 2009-05-08 06:40:08
18Research Article www.acsami.org Water-Soluble Thin Film Transistors and Circuits Based on Amorphous Indium−Gallium−Zinc Oxide Sung Hun Jin,*,†,¶ Seung-Kyun Kang,⊥,¶ In-Tak Cho,§,¶ Sang Youn Han,⊥,# Ha Uk Ch

Research Article www.acsami.org Water-Soluble Thin Film Transistors and Circuits Based on Amorphous Indium−Gallium−Zinc Oxide Sung Hun Jin,*,†,¶ Seung-Kyun Kang,⊥,¶ In-Tak Cho,§,¶ Sang Youn Han,⊥,# Ha Uk Ch

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2015-05-04 07:20:04
19Heterogeneously Integrated Optoelectronic Devices Enabled by Micro‐Transfer Printing

Heterogeneously Integrated Optoelectronic Devices Enabled by Micro‐Transfer Printing

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2015-10-26 09:45:23
20Microsoft PowerPoint - Presentation1

Microsoft PowerPoint - Presentation1

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Source URL: rogers.matse.illinois.edu

Language: English - Date: 2011-11-11 07:15:46